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1A,Current - Collector (Ic) (Max)

830mW,Power - Max

24 parts found

Part Numbers Manufacturer Name Datasheet Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Mounting Type Package / Case

PBSS4140S,126 NXP SEMICONDUCTORS

NPN 1A 40V 500mV @ 100mA, 1A 100nA 300 @ 500mA, 5V 830mW 150MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

PBSS5140S,126 NXP SEMICONDUCTORS

PNP 1A 40V 500mV @ 100mA, 1A 100nA 300 @ 100mA, 5V 830mW 150MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

PBSS8110AS,126 NXP SEMICONDUCTORS

NPN 1A 100V 200mV @ 100mA, 1A 100nA 150 @ 250mA, 10V 830mW 100MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

PBSS8110S,126 NXP SEMICONDUCTORS

NPN 1A 100V 200mV @ 100mA, 1A 100nA 150 @ 250mA, 10V 830mW 100MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

PBSS9110AS,126 NXP SEMICONDUCTORS

PNP 1A 100V 320mV @ 100mA, 1A 100nA 150 @ 500mA, 5V 830mW 100MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

PBSS9110S,126 NXP SEMICONDUCTORS

PNP 1A 100V 320mV @ 100mA, 1A 100nA 150 @ 500mA, 5V 830mW 100MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

BC879,112 NXP SEMICONDUCTORS

NPN - Darlington 1A 80V 1.8V @ 1mA, 1A 50nA 2000 @ 500mA, 10V 830mW 200MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)

BC368,126 NXP SEMICONDUCTORS

NPN 1A 20V 500mV @ 100mA, 1A - 85 @ 500mA, 1V 830mW 170MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

BC635,116 NXP SEMICONDUCTORS

NPN 1A 45V 500mV @ 50mA, 500mA - 63 @ 150mA, 2V 830mW 180MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

BC635-16,126 NXP SEMICONDUCTORS

NPN 1A 45V 500mV @ 50mA, 500mA - 100 @ 150mA, 2V 830mW 180MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

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Part Numbers	Manufacturer Name	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Mounting Type	Package / Case
PBSS4140S,126	NXP SEMICONDUCTORS	NPN	1A	40V	500mV @ 100mA, 1A	100nA	300 @ 500mA, 5V	830mW	150MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
PBSS5140S,126	NXP SEMICONDUCTORS	PNP	1A	40V	500mV @ 100mA, 1A	100nA	300 @ 100mA, 5V	830mW	150MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
PBSS8110AS,126	NXP SEMICONDUCTORS	NPN	1A	100V	200mV @ 100mA, 1A	100nA	150 @ 250mA, 10V	830mW	100MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
PBSS8110S,126	NXP SEMICONDUCTORS	NPN	1A	100V	200mV @ 100mA, 1A	100nA	150 @ 250mA, 10V	830mW	100MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
PBSS9110AS,126	NXP SEMICONDUCTORS	PNP	1A	100V	320mV @ 100mA, 1A	100nA	150 @ 500mA, 5V	830mW	100MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
PBSS9110S,126	NXP SEMICONDUCTORS	PNP	1A	100V	320mV @ 100mA, 1A	100nA	150 @ 500mA, 5V	830mW	100MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BC879,112	NXP SEMICONDUCTORS	NPN - Darlington	1A	80V	1.8V @ 1mA, 1A	50nA	2000 @ 500mA, 10V	830mW	200MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA)
BC368,126	NXP SEMICONDUCTORS	NPN	1A	20V	500mV @ 100mA, 1A	-	85 @ 500mA, 1V	830mW	170MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BC635,116	NXP SEMICONDUCTORS	NPN	1A	45V	500mV @ 50mA, 500mA	-	63 @ 150mA, 2V	830mW	180MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BC635-16,126	NXP SEMICONDUCTORS	NPN	1A	45V	500mV @ 50mA, 500mA	-	100 @ 150mA, 2V	830mW	180MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads

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