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Home Category Discrete Semiconductor Products Transistors Bipolar(BJT) Pre-biased, Single & Arrays
1A,Current - Collector (Ic) (Max)
40 @ 20mA, 10V,DC Current Gain (hFE) (Min) @ Ic, Vce
10 parts found
Part Numbers Manufacturer Name Datasheet Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Mounting Type Package / Case
2N3439L MICROSEMI COMMERCIAL BUSINESS UNIT
NPN 1A 350V 500mV @ 4mA, 50mA 5µA (ICBO) 40 @ 20mA, 10V 800mW - Through Hole TO-205AA, TO-5-3 Metal Can
2N3439 STMICROELECTRONICS
NPN 1A 350V 500mV @ 4mA, 50mA 20µA 40 @ 20mA, 10V 1W 15MHz Through Hole TO-205AD, TO-39-3 Metal Can
2N3440 MICROSEMI COMMERCIAL BUSINESS UNIT
NPN 1A 250V 500mV @ 4mA, 50mA 5µA (ICBO) 40 @ 20mA, 10V 800mW - Through Hole TO-205AD, TO-39-3 Metal Can
2N3440L MICROSEMI COMMERCIAL BUSINESS UNIT
NPN 1A 250V 500mV @ 4mA, 50mA 5µA (ICBO) 40 @ 20mA, 10V 800mW - Through Hole TO-205AA, TO-5-3 Metal Can
2N3439UA MICROSEMI COMMERCIAL BUSINESS UNIT
NPN 1A 350V 500mV @ 4mA, 50mA 5µA (ICBO) 40 @ 20mA, 10V 800mW - - -
JAN2N3440L MICROSEMI CORP
NPN 1A 250V 500mV @ 4mA, 50mA 5µA (ICBO) 40 @ 20mA, 10V 800mW - Through Hole TO-205AA, TO-5-3 Metal Can
JANTXV2N3440 MICROSEMI CORP
NPN 1A 250V 500mV @ 4mA, 50mA 2µA 40 @ 20mA, 10V 800mW - - -
JANTXV2N3439 MICROSEMI CORP
NPN 1A 350V 500mV @ 4mA, 50mA 2µA 40 @ 20mA, 10V 800mW - - -
JANTXV2N3440L MICROSEMI CORP
NPN 1A 250V 500mV @ 4mA, 50mA 2µA 40 @ 20mA, 10V 800mW - - -
2N3440 STMICROELECTRONICS
NPN 1A 250V 500mV @ 4mA, 50mA 50µA 40 @ 20mA, 10V 1W 15MHz Through Hole TO-205AD, TO-39-3 Metal Can


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