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Home Category Discrete Semiconductor Products Transistors Bipolar(BJT) Pre-biased, Single & Arrays
1A,Current - Collector (Ic) (Max)
500nA,Current - Collector Cutoff (Max)
9 parts found
Part Numbers Manufacturer Name Datasheet Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Mounting Type Package / Case
BST52,135 NXP SEMICONDUCTORS
NPN - Darlington 1A 80V 1.3V @ 500µA, 500mA 500nA 2000 @ 500mA, 10V 1.3W 200MHz Surface Mount TO-243AA
BC517 ON SEMICONDUCTOR
NPN - Darlington 1A 30V 1V @ 100µA, 100mA 500nA 30000 @ 20mA, 2V 625mW 200MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)
DTDG23YPT100 ROHM CO LTD
NPN - Pre-Biased 1A 60V 400mV @ 5mA, 500mA 500nA 300 @ 500mA, 2V 1.5W 80MHz Surface Mount TO-243AA
MPSW56 FAIRCHILD SEMICONDUCTOR CORP
PNP 1A 80V 500mV @ 10mA, 250mA 500nA 50 @ 250mA, 1V 1W 50MHz Through Hole TO-226-3, TO-92-3 Long Body
BC517RL1 ON SEMICONDUCTOR
NPN - Darlington 1A 30V 1V @ 100µA, 100mA 500nA 30000 @ 20mA, 2V 625mW 200MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BC517ZL1 ON SEMICONDUCTOR
NPN - Darlington 1A 30V 1V @ 100µA, 100mA 500nA 30000 @ 20mA, 2V 625mW 200MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BC517ZL1G ON SEMICONDUCTOR
NPN - Darlington 1A 30V 1V @ 100µA, 100mA 500nA 30000 @ 20mA, 2V 625mW 200MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BC517RL1G ON SEMICONDUCTOR
NPN - Darlington 1A 30V 1V @ 100µA, 100mA 500nA 30000 @ 20mA, 2V 1.5W 200MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BC517G ON SEMICONDUCTOR
NPN - Darlington 1A 30V 1V @ 100µA, 100mA 500nA 30000 @ 20mA, 2V 625mW 200MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)


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