1A,Current - Collector (Ic) (Max)
350V,Voltage - Collector Emitter Breakdown (Max)
13 parts found
Part Numbers Manufacturer Name Datasheet Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Mounting Type Package / Case
TIP49 FAIRCHILD SEMICONDUCTOR CORP
NPN 1A 350V 1V @ 200mA, 1A 1mA 30 @ 300mA, 10V 2W 10MHz Through Hole TO-220-3
2N3439L MICROSEMI COMMERCIAL BUSINESS UNIT
NPN 1A 350V 500mV @ 4mA, 50mA 5µA (ICBO) 40 @ 20mA, 10V 800mW - Through Hole TO-205AA, TO-5-3 Metal Can
MJE5731G ON SEMICONDUCTOR
PNP 1A 350V 1V @ 200mA, 1A 1mA 30 @ 300mA, 10V 40W 10MHz Through Hole TO-220-3
MJD5731T4G ON SEMICONDUCTOR
PNP 1A 350V 1V @ 200mA, 1A 100µA 30 @ 300mA, 10V 1.56W 10MHz Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
TIP49TU FAIRCHILD SEMICONDUCTOR CORP
NPN 1A 350V 1V @ 200mA, 1A 1mA 30 @ 300mA, 10V 2W 10MHz Through Hole TO-220-3
2N3439UA MICROSEMI COMMERCIAL BUSINESS UNIT
NPN 1A 350V 500mV @ 4mA, 50mA 5µA (ICBO) 40 @ 20mA, 10V 800mW - - -
JANTXV2N3439 MICROSEMI CORP
NPN 1A 350V 500mV @ 4mA, 50mA 2µA 40 @ 20mA, 10V 800mW - - -
JANTXV2N3439L MICROSEMI CORP
NPN 1A 350V 500mV @ 4mA, 50mA 2µA 40 @ 30mA, 10V 800mW - - -
MJD5731T4 ON SEMICONDUCTOR
PNP 1A 350V 1V @ 200mA, 1A 100µA 30 @ 300mA, 10V 1.56W 10MHz Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
MJE5731 ON SEMICONDUCTOR
PNP 1A 350V 1V @ 200mA, 1A 1mA 30 @ 300mA, 10V 40W 10MHz Through Hole TO-220-3