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Home Category Discrete Semiconductor Products Transistors Bipolar(BJT) Pre-biased, Single & Arrays
150mA,Current - Collector (Ic) (Max)
500mW,Power - Max
16 parts found
Part Numbers Manufacturer Name Datasheet Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Mounting Type Package / Case
FMMT558TA DIODES INC
PNP 150mA 400V 500mV @ 6mA, 50mA 100nA 100 @ 50mA, 10V 500mW 50MHz Surface Mount TO-236-3, SC-59, SOT-23-3
FMMT560TA DIODES INC
PNP 150mA 500V 500mV @ 10mA, 50mA 100nA 80 @ 50mA, 10V 500mW 60MHz Surface Mount TO-236-3, SC-59, SOT-23-3
FMMT560TC DIODES INC
PNP 150mA 500V 500mV @ 10mA, 50mA 100nA 80 @ 50mA, 10V 500mW 60MHz Surface Mount TO-236-3, SC-59, SOT-23-3
FMMT558TC DIODES INC
PNP 150mA 400V 500mV @ 6mA, 50mA 100nA 100 @ 50mA, 10V 500mW 50MHz Surface Mount TO-236-3, SC-59, SOT-23-3
2PA1015GR,126 NXP SEMICONDUCTORS
PNP 150mA 50V 300mV @ 10mA, 100mA - 200 @ 2mA, 6V 500mW 80MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
2PA1015Y,126 NXP SEMICONDUCTORS
PNP 150mA 50V 300mV @ 10mA, 100mA - 120 @ 2mA, 6V 500mW 80MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
2PC1815BL,126 NXP SEMICONDUCTORS
NPN 150mA 50V 300mV @ 10mA, 100mA - 350 @ 2mA, 6V 500mW 80MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
2PC1815GR,412 NXP SEMICONDUCTORS
NPN 150mA 50V 300mV @ 10mA, 100mA - 200 @ 2mA, 6V 500mW 80MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)
2PC1815GR,126 NXP SEMICONDUCTORS
NPN 150mA 50V 300mV @ 10mA, 100mA - 200 @ 2mA, 6V 500mW 80MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
2PC1815GR,116 NXP SEMICONDUCTORS
NPN 150mA 50V 300mV @ 10mA, 100mA - 200 @ 2mA, 6V 500mW 80MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads


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