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PNP - Pre-Biased,Transistor Type

40V,Voltage - Collector Emitter Breakdown (Max)

35 parts found

Part Numbers Manufacturer Name Datasheet Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Mounting Type Package / Case

FJN4309RBU FAIRCHILD SEMICONDUCTOR CORP

PNP - Pre-Biased 100mA 40V 300mV @ 1mA, 10mA - 100 @ 1mA, 5V 300mW 200MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)

FJN4310RTA FAIRCHILD SEMICONDUCTOR CORP

PNP - Pre-Biased 100mA 40V 300mV @ 1mA, 10mA - 100 @ 1mA, 5V 300mW 200MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

FJN4312RTA FAIRCHILD SEMICONDUCTOR CORP

PNP - Pre-Biased 100mA 40V 300mV @ 1mA, 10mA - 100 @ 1mA, 5V 300mW 200MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

FJN4311RBU FAIRCHILD SEMICONDUCTOR CORP

PNP - Pre-Biased 100mA 40V 300mV @ 1mA, 10mA - 100 @ 1mA, 5V 300mW 200MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)

FJN4311RTA FAIRCHILD SEMICONDUCTOR CORP

PNP - Pre-Biased 100mA 40V 300mV @ 1mA, 10mA - 100 @ 1mA, 5V 300mW 200MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

FJN4312RBU FAIRCHILD SEMICONDUCTOR CORP

PNP - Pre-Biased 100mA 40V 300mV @ 1mA, 10mA - 100 @ 1mA, 5V 300mW 200MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)

FJN4310RBU FAIRCHILD SEMICONDUCTOR CORP

PNP - Pre-Biased 100mA 40V 300mV @ 1mA, 10mA - 100 @ 1mA, 5V 300mW 200MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)

FJV4112RMTF FAIRCHILD SEMICONDUCTOR CORP

PNP - Pre-Biased 100mA 40V 300mV @ 1mA, 10mA - 100 @ 1mA, 5V 200mW 200MHz Surface Mount TO-236-3, SC-59, SOT-23-3

FJV4111RMTF FAIRCHILD SEMICONDUCTOR CORP

PNP - Pre-Biased 100mA 40V 300mV @ 1mA, 10mA - 100 @ 1mA, 5V 200mW 200MHz Surface Mount TO-236-3, SC-59, SOT-23-3

FJV4109RMTF FAIRCHILD SEMICONDUCTOR CORP

PNP - Pre-Biased 100mA 40V 300mV @ 1mA, 10mA - 100 @ 1mA, 5V 200mW 200MHz Surface Mount TO-236-3, SC-59, SOT-23-3

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Part Numbers	Manufacturer Name	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Mounting Type	Package / Case
FJN4309RBU	FAIRCHILD SEMICONDUCTOR CORP	PNP - Pre-Biased	100mA	40V	300mV @ 1mA, 10mA	-	100 @ 1mA, 5V	300mW	200MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA)
FJN4310RTA	FAIRCHILD SEMICONDUCTOR CORP	PNP - Pre-Biased	100mA	40V	300mV @ 1mA, 10mA	-	100 @ 1mA, 5V	300mW	200MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
FJN4312RTA	FAIRCHILD SEMICONDUCTOR CORP	PNP - Pre-Biased	100mA	40V	300mV @ 1mA, 10mA	-	100 @ 1mA, 5V	300mW	200MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
FJN4311RBU	FAIRCHILD SEMICONDUCTOR CORP	PNP - Pre-Biased	100mA	40V	300mV @ 1mA, 10mA	-	100 @ 1mA, 5V	300mW	200MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA)
FJN4311RTA	FAIRCHILD SEMICONDUCTOR CORP	PNP - Pre-Biased	100mA	40V	300mV @ 1mA, 10mA	-	100 @ 1mA, 5V	300mW	200MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
FJN4312RBU	FAIRCHILD SEMICONDUCTOR CORP	PNP - Pre-Biased	100mA	40V	300mV @ 1mA, 10mA	-	100 @ 1mA, 5V	300mW	200MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA)
FJN4310RBU	FAIRCHILD SEMICONDUCTOR CORP	PNP - Pre-Biased	100mA	40V	300mV @ 1mA, 10mA	-	100 @ 1mA, 5V	300mW	200MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA)
FJV4112RMTF	FAIRCHILD SEMICONDUCTOR CORP	PNP - Pre-Biased	100mA	40V	300mV @ 1mA, 10mA	-	100 @ 1mA, 5V	200mW	200MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3
FJV4111RMTF	FAIRCHILD SEMICONDUCTOR CORP	PNP - Pre-Biased	100mA	40V	300mV @ 1mA, 10mA	-	100 @ 1mA, 5V	200mW	200MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3
FJV4109RMTF	FAIRCHILD SEMICONDUCTOR CORP	PNP - Pre-Biased	100mA	40V	300mV @ 1mA, 10mA	-	100 @ 1mA, 5V	200mW	200MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3

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