| Part Numbers | Manufacturer Name | Datasheet | Transistor Type | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Vce Saturation (Max) @ Ib, Ic | Current - Collector Cutoff (Max) | DC Current Gain (hFE) (Min) @ Ic, Vce | Power - Max | Frequency - Transition | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RN2427TE85LF | TOSHIBA CORP | PNP - Pre-Biased | 800mA | 50V | 250mV @ 1mA, 50mA | 500nA | 90 @ 100mA, 1V | 200mW | 200MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | |
| PBRP113ES,126 | NXP SEMICONDUCTORS | PNP - Pre-Biased | 800mA | 50V | - | - | - | 500mW | - | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
| PBRP113ZS,126 | NXP SEMICONDUCTORS | PNP - Pre-Biased | 800mA | 50V | - | - | - | 500mW | - | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
| PBRP123ES,126 | NXP SEMICONDUCTORS | PNP - Pre-Biased | 800mA | 50V | - | - | - | 500mW | - | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
| PBRP123YS,126 | NXP SEMICONDUCTORS | PNP - Pre-Biased | 800mA | 50V | - | - | - | 500mW | - | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
| RN2422TE85LF | TOSHIBA CORP | PNP - Pre-Biased | 800mA | 50V | 250mV @ 1mA, 50mA | 500nA | 65 @ 100mA, 1V | 200mW | 200MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 |
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