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NPN - Pre-Biased,Transistor Type

40V,Voltage - Collector Emitter Breakdown (Max)

43 parts found

Part Numbers Manufacturer Name Datasheet Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Mounting Type Package / Case

FJN3309RBU FAIRCHILD SEMICONDUCTOR CORP

NPN - Pre-Biased 100mA 40V 300mV @ 1mA, 10mA - 100 @ 1mA, 5V 300mW 250MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)

FJN3312RTA FAIRCHILD SEMICONDUCTOR CORP

NPN - Pre-Biased 100mA 40V 300mV @ 1mA, 10mA - 100 @ 1mA, 5V 300mW 250MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

FJN3312RBU FAIRCHILD SEMICONDUCTOR CORP

NPN - Pre-Biased 100mA 40V 300mV @ 1mA, 10mA - 100 @ 1mA, 5V 300mW 250MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)

FJN3311RBU FAIRCHILD SEMICONDUCTOR CORP

NPN - Pre-Biased 100mA 40V 300mV @ 1mA, 10mA - 100 @ 1mA, 5V 300mW 250MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)

FJN3310RTA FAIRCHILD SEMICONDUCTOR CORP

NPN - Pre-Biased 100mA 40V 300mV @ 1mA, 10mA - 100 @ 1mA, 5V 300mW 250MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

FJN3310RBU FAIRCHILD SEMICONDUCTOR CORP

NPN - Pre-Biased 100mA 40V 300mV @ 1mA, 10mA - 100 @ 1mA, 5V 300mW 250MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)

FJN3309RTA FAIRCHILD SEMICONDUCTOR CORP

NPN - Pre-Biased 100mA 40V 300mV @ 1mA, 10mA - 100 @ 1mA, 5V 300mW 250MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

FJV3112RMTF FAIRCHILD SEMICONDUCTOR CORP

NPN - Pre-Biased 100mA 40V 300mV @ 1mA, 10mA - 100 @ 1mA, 5V 200mW 250MHz Surface Mount TO-236-3, SC-59, SOT-23-3

FJV3111RMTF FAIRCHILD SEMICONDUCTOR CORP

NPN - Pre-Biased 100mA 40V 300mV @ 1mA, 10mA - 100 @ 1mA, 5V 200mW 250MHz Surface Mount TO-236-3, SC-59, SOT-23-3

FJV3109RMTF FAIRCHILD SEMICONDUCTOR CORP

NPN - Pre-Biased 100mA 40V 300mV @ 1mA, 10mA - 100 @ 1mA, 5V 200mW 250MHz Surface Mount TO-236-3, SC-59, SOT-23-3

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Part Numbers	Manufacturer Name	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Mounting Type	Package / Case
FJN3309RBU	FAIRCHILD SEMICONDUCTOR CORP	NPN - Pre-Biased	100mA	40V	300mV @ 1mA, 10mA	-	100 @ 1mA, 5V	300mW	250MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA)
FJN3312RTA	FAIRCHILD SEMICONDUCTOR CORP	NPN - Pre-Biased	100mA	40V	300mV @ 1mA, 10mA	-	100 @ 1mA, 5V	300mW	250MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
FJN3312RBU	FAIRCHILD SEMICONDUCTOR CORP	NPN - Pre-Biased	100mA	40V	300mV @ 1mA, 10mA	-	100 @ 1mA, 5V	300mW	250MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA)
FJN3311RBU	FAIRCHILD SEMICONDUCTOR CORP	NPN - Pre-Biased	100mA	40V	300mV @ 1mA, 10mA	-	100 @ 1mA, 5V	300mW	250MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA)
FJN3310RTA	FAIRCHILD SEMICONDUCTOR CORP	NPN - Pre-Biased	100mA	40V	300mV @ 1mA, 10mA	-	100 @ 1mA, 5V	300mW	250MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
FJN3310RBU	FAIRCHILD SEMICONDUCTOR CORP	NPN - Pre-Biased	100mA	40V	300mV @ 1mA, 10mA	-	100 @ 1mA, 5V	300mW	250MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA)
FJN3309RTA	FAIRCHILD SEMICONDUCTOR CORP	NPN - Pre-Biased	100mA	40V	300mV @ 1mA, 10mA	-	100 @ 1mA, 5V	300mW	250MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
FJV3112RMTF	FAIRCHILD SEMICONDUCTOR CORP	NPN - Pre-Biased	100mA	40V	300mV @ 1mA, 10mA	-	100 @ 1mA, 5V	200mW	250MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3
FJV3111RMTF	FAIRCHILD SEMICONDUCTOR CORP	NPN - Pre-Biased	100mA	40V	300mV @ 1mA, 10mA	-	100 @ 1mA, 5V	200mW	250MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3
FJV3109RMTF	FAIRCHILD SEMICONDUCTOR CORP	NPN - Pre-Biased	100mA	40V	300mV @ 1mA, 10mA	-	100 @ 1mA, 5V	200mW	250MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3

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