NPN,Transistor Type
350V,Voltage - Collector Emitter Breakdown (Max)
40 @ 20mA, 10V,DC Current Gain (hFE) (Min) @ Ic, Vce
9 parts found
Part Numbers Manufacturer Name Datasheet Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Mounting Type Package / Case
BST39TA DIODES INC
NPN 500mA 350V 500mV @ 4mA, 50mA - 40 @ 20mA, 10V 1W 70MHz Surface Mount TO-243AA
2N3439L MICROSEMI COMMERCIAL BUSINESS UNIT
NPN 1A 350V 500mV @ 4mA, 50mA 5µA (ICBO) 40 @ 20mA, 10V 800mW - Through Hole TO-205AA, TO-5-3 Metal Can
BST39,115 NXP SEMICONDUCTORS
NPN 100mA 350V 500mV @ 4mA, 50mA - 40 @ 20mA, 10V 1.3W 70MHz Surface Mount TO-243AA
BSP19,115 NXP SEMICONDUCTORS
NPN 100mA 350V 500mV @ 4mA, 50mA - 40 @ 20mA, 10V 1.2W 70MHz Surface Mount TO-261-4, TO-261AA
BSP19AT1G ON SEMICONDUCTOR
NPN 100mA 350V 500mV @ 4mA, 50mA - 40 @ 20mA, 10V 800mW 70MHz Surface Mount TO-261-4, TO-261AA
2N3439 STMICROELECTRONICS
NPN 1A 350V 500mV @ 4mA, 50mA 20µA 40 @ 20mA, 10V 1W 15MHz Through Hole TO-205AD, TO-39-3 Metal Can
2N3439UA MICROSEMI COMMERCIAL BUSINESS UNIT
NPN 1A 350V 500mV @ 4mA, 50mA 5µA (ICBO) 40 @ 20mA, 10V 800mW - - -
JANTXV2N3439 MICROSEMI CORP
NPN 1A 350V 500mV @ 4mA, 50mA 2µA 40 @ 20mA, 10V 800mW - - -
BSP19AT1 ON SEMICONDUCTOR
NPN 100mA 350V 500mV @ 4mA, 50mA - 40 @ 20mA, 10V 800mW 70MHz Surface Mount TO-261-4, TO-261AA