| Part Numbers | Manufacturer Name | Datasheet | Transistor Type | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Vce Saturation (Max) @ Ib, Ic | Current - Collector Cutoff (Max) | DC Current Gain (hFE) (Min) @ Ic, Vce | Power - Max | Frequency - Transition | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PBHV8118T,215 | NXP SEMICONDUCTORS | NPN | 1A | 180V | 50mV @ 20mA, 100mA | 100nA | 50 @ 500mA, 10V | 300mW | 30MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | |
| PBHV8115T,215 | NXP SEMICONDUCTORS | NPN | 1A | 150V | 350mV @ 200mA, 1A | 100nA | 50 @ 500mA, 10V | 300mW | 30MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | |
| PBHV8115Z,115 | NXP SEMICONDUCTORS | NPN | 1A | 150V | 350mV @ 200mA, 1A | 100nA | 50 @ 500mA, 10V | 1.4W | 30MHz | Surface Mount | TO-261-4, TO-261AA | |
| JAN2N3019S | MICROSEMI CORP | NPN | 1A | 80V | 500mV @ 50mA, 500mA | 100nA | 50 @ 500mA, 10V | 800mW | - | Through Hole | TO-205AD, TO-39-3 Metal Can | |
| JAN2N3019 | MICROSEMI CORP | NPN | 1A | 80V | 500mV @ 50mA, 500mA | 100nA | 50 @ 500mA, 10V | 800mW | - | Through Hole | TO-205AD, TO-39-3 Metal Can |
© 2016 Copyright
