NPN,Transistor Type
1.6V @ 50mA, 500mA,Vce Saturation (Max) @ Ib, Ic
Through Hole,Mounting Type
18 parts found
Part Numbers Manufacturer Name Datasheet Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Mounting Type Package / Case
MPS2222 ON SEMICONDUCTOR
NPN 600mA 30V 1.6V @ 50mA, 500mA - 100 @ 150mA, 10V 625mW 250MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)
PN4141 FAIRCHILD SEMICONDUCTOR CORP
NPN 500mA 30V 1.6V @ 50mA, 500mA - 100 @ 150mA, 10V 625mW - Through Hole TO-226-3, TO-92-3 (TO-226AA)
2N2219 MICROSEMI COMMERCIAL BUSINESS UNIT
NPN 800mA 30V 1.6V @ 50mA, 500mA 10µA (ICBO) 100 @ 150mA, 10mV 800mW 250MHz Through Hole TO-205AD, TO-39-3 Metal Can
JAN2N2219 MICROSEMI CORP
NPN 800mA 30V 1.6V @ 50mA, 500mA 10nA (ICBO) 50 @ 1mA, 10V 800mW - Through Hole TO-205AD, TO-39-3 Metal Can
JAN2N2219A MICROSEMI CORP
NPN 800mA 30V 1.6V @ 50mA, 500mA 10nA (ICBO) 50 @ 1mA, 10V 800mW - Through Hole TO-205AD, TO-39-3 Metal Can
JANTX2N2219 MICROSEMI CORP
NPN 800mA 30V 1.6V @ 50mA, 500mA 100µA (ICBO) 50 @ 1mA, 10V 800mW - Through Hole TO-205AD, TO-39-3 Metal Can
JAN2N2219AL MICROSEMI CORP
NPN 800mA 30V 1.6V @ 50mA, 500mA 10nA (ICBO) 50 @ 1mA, 10V 800mW - Through Hole TO-205AA, TO-5-3 Metal Can
JANTXV2N3486A MICROSEMI CORP
NPN 600mA 60V 1.6V @ 50mA, 500mA 10µA (ICBO) 100 @ 150mA, 10V 400mW - Through Hole TO-46-3
MPS2222RLRPG ON SEMICONDUCTOR
NPN 600mA 30V 1.6V @ 50mA, 500mA - 100 @ 150mA, 10V 625mW 250MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
PN2222 ON SEMICONDUCTOR
NPN 600mA 30V 1.6V @ 50mA, 500mA - 100 @ 150mA, 10V 625mW 250MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)