7 NPN Darlington,Transistor Type
1000 @ 350mA, 2V,DC Current Gain (hFE) (Min) @ Ic, Vce
38 parts found
Part Numbers Manufacturer Name Datasheet Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Mounting Type Package / Case
MC1413DR2G ON SEMICONDUCTOR
7 NPN Darlington 500mA 50V 1.6V @ 500µA, 350mA - 1000 @ 350mA, 2V - - Surface Mount 16-SOIC (0.154", 3.90mm Width)
MC1413BDR2G ON SEMICONDUCTOR
7 NPN Darlington 500mA 50V 1.6V @ 500µA, 350mA - 1000 @ 350mA, 2V - - Surface Mount 16-SOIC (0.154", 3.90mm Width)
MC1413DG ON SEMICONDUCTOR
7 NPN Darlington 500mA 50V 1.6V @ 500µA, 350mA - 1000 @ 350mA, 2V - - Surface Mount 16-SOIC (0.154", 3.90mm Width)
MC1413PG ON SEMICONDUCTOR
7 NPN Darlington 500mA 50V 1.6V @ 500µA, 350mA - 1000 @ 350mA, 2V - - Through Hole 16-DIP (0.300", 7.62mm)
NCV1413BDR2G ON SEMICONDUCTOR
7 NPN Darlington 500mA 50V 1.6V @ 500µA, 350mA - 1000 @ 350mA, 2V - - Surface Mount 16-SOIC (0.154", 3.90mm Width)
SG2003J-883B MICROSEMI CORP-ANALOG MIXED SIGNAL GROUP
7 NPN Darlington 500mA 50V 1.6V @ 500µA, 350mA - 1000 @ 350mA, 2V - - Through Hole 16-CDIP (0.300", 7.62mm)
SG2003J MICROSEMI CORP-ANALOG MIXED SIGNAL GROUP
7 NPN Darlington 500mA 50V 1.6V @ 500µA, 350mA - 1000 @ 350mA, 2V - - Through Hole 16-CDIP (0.300", 7.62mm)
SG2003J-JAN MICROSEMI CORP-ANALOG MIXED SIGNAL GROUP
7 NPN Darlington 500mA 50V 1.6V @ 500µA, 350mA - 1000 @ 350mA, 2V - - Through Hole 16-CDIP (0.300", 7.62mm)
SG2023J-DESC MICROSEMI CORP-ANALOG MIXED SIGNAL GROUP
7 NPN Darlington 500mA 95V 1.6V @ 500µA, 350mA - 1000 @ 350mA, 2V - - Through Hole 16-CDIP (0.300", 7.62mm)
SG2023J-883B MICROSEMI CORP-ANALOG MIXED SIGNAL GROUP
7 NPN Darlington 500mA 95V 1.6V @ 500µA, 350mA - 1000 @ 350mA, 2V - - - -