310mW,Power - Max
10pF @ 12V (VGS),Input Capacitance (Ciss) @ Vds
5 parts found
Part Numbers Manufacturer Name Datasheet FET Type Voltage - Breakdown (V(BR)GSS) Drain to Source Voltage (Vdss) Current - Drain (Idss) @ Vds Current Drain (Id) Voltage - Cutoff (VGS off) @ Id Power - Max Input Capacitance (Ciss) @ Vds Resistance - RDS(On) Mounting Type Package / Case
2N5638RLRA ON SEMICONDUCTOR
N-Channel 35V 30V 50mA @ 20V - - 310mW 10pF @ 12V (VGS) 30 Ohm Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
2N5638RLRAG ON SEMICONDUCTOR
N-Channel 35V 30V 50mA @ 20V - - 310mW 10pF @ 12V (VGS) 30 Ohm Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
2N5639G ON SEMICONDUCTOR
N-Channel 35V 30V 25mA @ 20V - - 310mW 10pF @ 12V (VGS) 60 Ohm Through Hole TO-226-3, TO-92-3 (TO-226AA)
2N5639RLRAG ON SEMICONDUCTOR
N-Channel 35V 30V 25mA @ 20V - - 310mW 10pF @ 12V (VGS) 60 Ohm Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
2N5639 ON SEMICONDUCTOR
N-Channel 35V 30V 25mA @ 20V - - 310mW 10pF @ 12V (VGS) 60 Ohm Through Hole TO-226-3, TO-92-3 (TO-226AA)