1.2mA @ 10V,Current - Drain (Idss) @ Vds
200mW,Power - Max
2 parts found
Part Numbers Manufacturer Name Datasheet FET Type Voltage - Breakdown (V(BR)GSS) Drain to Source Voltage (Vdss) Current - Drain (Idss) @ Vds Current Drain (Id) Voltage - Cutoff (VGS off) @ Id Power - Max Input Capacitance (Ciss) @ Vds Resistance - RDS(On) Mounting Type Package / Case
2SK3666-3-TB-E ON SEMICONDUCTOR
N-Channel - 30V 1.2mA @ 10V 10mA 180mV @ 1µA 200mW 4pF @ 10V 200 Ohm Surface Mount TO-236-3, SC-59, SOT-23-3
2SK3320-Y(TE85L,F) TOSHIBA CORP
N-Channel - - 1.2mA @ 10V - 200mV @ 100nA 200mW 13pF @ 10V - Surface Mount 6-TSSOP (5 Lead), SC-88A, SOT-353