N-Channel,FET Type
8mA @ 15V,Current - Drain (Idss) @ Vds
10 parts found
Part Numbers Manufacturer Name Datasheet FET Type Voltage - Breakdown (V(BR)GSS) Drain to Source Voltage (Vdss) Current - Drain (Idss) @ Vds Current Drain (Id) Voltage - Cutoff (VGS off) @ Id Power - Max Input Capacitance (Ciss) @ Vds Resistance - RDS(On) Mounting Type Package / Case
BSR58 FAIRCHILD SEMICONDUCTOR CORP
N-Channel 40V - 8mA @ 15V - 800mV @ 0.5nA 250mW - 60 Ohm Surface Mount TO-236-3, SC-59, SOT-23-3
PN4861 FAIRCHILD SEMICONDUCTOR CORP
N-Channel 30V - 8mA @ 15V - 800mV @ 0.5nA 625mW 18pF @ 10V 60 Ohm Through Hole TO-226-3, TO-92-3 (TO-226AA)
TIS75 FAIRCHILD SEMICONDUCTOR CORP
N-Channel 30V - 8mA @ 15V - 800mV @ 4nA 350mW 18pF @ 10V (VGS) 60 Ohm Through Hole TO-226-3, TO-92-3 (TO-226AA)
TIS75_D26Z FAIRCHILD SEMICONDUCTOR CORP
N-Channel 30V - 8mA @ 15V - 800mV @ 4nA 350mW 18pF @ 10V (VGS) 60 Ohm Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
TIS75_D75Z FAIRCHILD SEMICONDUCTOR CORP
N-Channel 30V - 8mA @ 15V - 800mV @ 4nA 350mW 18pF @ 10V (VGS) 60 Ohm Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
TIS75_J35Z FAIRCHILD SEMICONDUCTOR CORP
N-Channel 30V - 8mA @ 15V - 800mV @ 4nA 350mW 18pF @ 10V (VGS) 60 Ohm Through Hole TO-226-3, TO-92-3 (TO-226AA)
BSR58,215 NXP SEMICONDUCTORS
N-Channel 40V 40V 8mA @ 15V - 800mV @ 0.5nA 250mW - 60 Ohm Surface Mount TO-236-3, SC-59, SOT-23-3
BSR58LT1G ON SEMICONDUCTOR
N-Channel 40V - 8mA @ 15V - 800mV @ 1µA 350mW - 60 Ohm Surface Mount TO-236-3, SC-59, SOT-23-3
SST5486-E3 VISHAY SILICONIX
N-Channel 25V - 8mA @ 15V - 2V @ 10nA 350mW 5pF @ 15V - Surface Mount TO-236-3, SC-59, SOT-23-3
SST5486-T1-E3 VISHAY SILICONIX
N-Channel 25V - 8mA @ 15V - 2V @ 10nA 350mW 5pF @ 15V - Surface Mount TO-236-3, SC-59, SOT-23-3