| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SI8483DB-T2-E1 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 12V | 8.7A (Ta) | 26 mOhm @ 1.5A, 4.5V | 800mV @ 250µA | 65nC @ 10V | 1840pF @ 6V | 2.77W | Surface Mount | 6-UFBGA |
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