| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PMCPB5530X,115 | NXP SEMICONDUCTORS | N and P-Channel | 20V | 5.3A, 4.5A | 34 mOhm @ 3A, 4.5V | 900mV @ 250µA | 21.7nC @ 4.5V | 660pF @ 10V | 490mW | Surface Mount | 6-UDFN Exposed Pad | |
| MCH6436-TL-E | ON SEMICONDUCTOR | MOSFET N-Channel, Metal Oxide | 30V | 6A (Ta) | 34 mOhm @ 3A, 4.5V | - | 7.5nC @ 4.5V | 710pF @ 10V | 1.5W | Surface Mount | 6-SMD, Flat Leads | |
| SIB437EDKT-T1-GE3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 8V | 7.5A (Ta) | 34 mOhm @ 3A, 4.5V | 700mV @ 250µA | 16nC @ 4.5V | - | 2.4W | Surface Mount | PowerPAK® TSC-75-6 |
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