1 Ohm @ 3.3A, 10V,Rds On (Max) @ Id, Vgs
3.1W,Power - Max
7 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IRF730SPBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 400V 5.5A (Tc) 1 Ohm @ 3.3A, 10V 4V @ 250µA 38nC @ 10V 700pF @ 25V 3.1W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF730STRLPBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 400V 5.5A (Tc) 1 Ohm @ 3.3A, 10V 4V @ 250µA 38nC @ 10V 700pF @ 25V 3.1W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF730STRRPBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 400V 5.5A (Tc) 1 Ohm @ 3.3A, 10V 4V @ 250µA 38nC @ 10V 700pF @ 25V 3.1W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF730S VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 400V 5.5A (Tc) 1 Ohm @ 3.3A, 10V 4V @ 250µA 38nC @ 10V 700pF @ 25V 3.1W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF730L VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 400V 5.5A (Tc) 1 Ohm @ 3.3A, 10V 4V @ 250µA 22nC @ 10V 600pF @ 25V 3.1W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
IRF730STRL VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 400V 5.5A (Tc) 1 Ohm @ 3.3A, 10V 4V @ 250µA 38nC @ 10V 700pF @ 25V 3.1W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF730STRR VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 400V 5.5A (Tc) 1 Ohm @ 3.3A, 10V 4V @ 250µA 38nC @ 10V 700pF @ 25V 3.1W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB