| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SI4101DY-T1-GE3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 30V | 18A (Ta) | 6 mOhm @ 15A, 10V | 2.5V @ 250µA | 203nC @ 10V | 8190pF @ 15V | 2.9W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| SI4286DY-T1-GE3 | VISHAY SILICONIX | 2 N-Channel (Dual) | 40V | 7A | 32.5 mOhm @ 8A, 10V | 2.5V @ 250µA | 10.5nC @ 10V | 375pF @ 20V | 2.9W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) |
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