MOSFET P-Channel, Metal Oxide,FET Type
33nC @ 4.5V,Gate Charge (Qg) @ Vgs
3 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
ECH8304-TL-E SANYO SEMICONDUCTOR CO LTD
MOSFET P-Channel, Metal Oxide 12V 9.5A (Ta) 16 mOhm @ 4.5A, 4.5V - 33nC @ 4.5V 3180pF @ 6V 1.6W Surface Mount 8-SMD, Flat Lead
SI3473DV-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 12V 5.9A (Ta) 23 mOhm @ 7.9A, 4.5V 1V @ 250µA 33nC @ 4.5V - 1.1W Surface Mount 6-TSOP (0.065", 1.65mm Width)
SI3473DV-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 12V 5.9A (Ta) 23 mOhm @ 7.9A, 4.5V 1V @ 250µA 33nC @ 4.5V - 1.1W Surface Mount 6-TSOP (0.065", 1.65mm Width)