| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IXTP44N10T | IXYS CORP | MOSFET N-Channel, Metal Oxide | 100V | 44A (Tc) | 30 mOhm @ 22A, 10V | 4.5V @ 25µA | 33nC @ 10V | 1262pF @ 25V | 130W | Through Hole | TO-220-3 | |
| IXTY44N10T | IXYS CORP | MOSFET N-Channel, Metal Oxide | 100V | 44A (Tc) | 30 mOhm @ 22A, 10V | 4.5V @ 25µA | 33nC @ 10V | 1262pF @ 25V | 130W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| TPH8R80ANH,L1Q | TOSHIBA CORP | MOSFET N-Channel, Metal Oxide | 100V | 32A (Tc) | 8.8 mOhm @ 16A, 10V | 4V @ 500µA | 33nC @ 10V | 2800pF @ 50V | 61W | Surface Mount | 8-PowerVDFN | |
| PSMN028-100YS,115 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 100V | 42A (Tc) | 27.5 mOhm @ 15A, 10V | 4V @ 1mA | 33nC @ 10V | 1634pF @ 50V | 89W | Surface Mount | SC-100, SOT-669, 4-LFPAK | |
| ECH8306-TL-E | SANYO SEMICONDUCTOR CO LTD | MOSFET P-Channel, Metal Oxide | 100V | 2A (Ta) | 225 mOhm @ 1A, 10V | - | 33nC @ 10V | 1600pF @ 20V | 1.6W | Surface Mount | 8-SMD, Flat Lead | |
| TK18E10K3,S1X(S | TOSHIBA CORP | MOSFET N-Channel, Metal Oxide | 100V | 18A (Ta) | 42 mOhm @ 9A, 10V | - | 33nC @ 10V | - | 71W | Through Hole | TO-220-3 | |
| IRFI530GPBF | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 100V | 9.7A (Tc) | 160 mOhm @ 5.8A, 10V | 4V @ 250µA | 33nC @ 10V | 670pF @ 25V | 42W | Through Hole | TO-220-3 Full Pack, Isolated Tab | |
| IRFI530G | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 100V | 9.7A (Tc) | 160 mOhm @ 5.8A, 10V | 4V @ 250µA | 33nC @ 10V | 670pF @ 25V | 42W | Through Hole | TO-220-3 Full Pack, Isolated Tab |
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