32nC @ 10V,Gate Charge (Qg) @ Vgs
1.1W,Power - Max
3 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
FDC3616N FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 100V 3.7A (Ta) 70 mOhm @ 3.7A, 10V 4V @ 250µA 32nC @ 10V 1215pF @ 50V 1.1W Surface Mount -
SI4942DY-T1-E3 VISHAY SILICONIX
2 N-Channel (Dual) 40V 5.3A 21 mOhm @ 7.4A, 10V 3V @ 250µA 32nC @ 10V - 1.1W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI4942DY-T1-GE3 VISHAY SILICONIX
2 N-Channel (Dual) 40V 5.3A 21 mOhm @ 7.4A, 10V 3V @ 250µA 32nC @ 10V - 1.1W Surface Mount 8-SOIC (0.154", 3.90mm Width)