36 mOhm @ 4.6A, 10V,Rds On (Max) @ Id, Vgs
32nC @ 10V,Gate Charge (Qg) @ Vgs
2 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SI4436DY-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 8A (Tc) 36 mOhm @ 4.6A, 10V 2.5V @ 250µA 32nC @ 10V 1100pF @ 30V 5W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI4436DY-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 8A (Tc) 36 mOhm @ 4.6A, 10V 2.5V @ 250µA 32nC @ 10V 1100pF @ 30V 5W Surface Mount 8-SOIC (0.154", 3.90mm Width)