6.2 mOhm @ 19.5A, 4.5V,Rds On (Max) @ Id, Vgs
27nC @ 4.5V,Gate Charge (Qg) @ Vgs
2 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SI7106DN-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 20V 12.5A (Ta) 6.2 mOhm @ 19.5A, 4.5V 1.5V @ 250µA 27nC @ 4.5V - 1.5W Surface Mount PowerPAK® 1212-8
SI7106DN-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 20V 12.5A (Ta) 6.2 mOhm @ 19.5A, 4.5V 1.5V @ 250µA 27nC @ 4.5V - 1.5W Surface Mount PowerPAK® 1212-8