67 mOhm @ 24A, 10V,Rds On (Max) @ Id, Vgs
225nC @ 10V,Gate Charge (Qg) @ Vgs
2 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SIHG47N60EF-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 600V 47A (Tc) 67 mOhm @ 24A, 10V 4V @ 250µA 225nC @ 10V 4854pF @ 100V 379W Through Hole TO-247-3
SIHW47N60EF-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 600V 47A (Tc) 67 mOhm @ 24A, 10V 4V @ 250µA 225nC @ 10V 4854pF @ 100V 379W Through Hole TO-247-3