55 mOhm @ 1A, 4.5V,Rds On (Max) @ Id, Vgs
21nC @ 4.5V,Gate Charge (Qg) @ Vgs
2 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SI8405DB-T1-E1 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 12V 3.6A (Ta) 55 mOhm @ 1A, 4.5V 950mV @ 250µA 21nC @ 4.5V - 1.47W Surface Mount 4-XFBGA, CSPBGA
SI8405DB-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 12V 3.6A (Ta) 55 mOhm @ 1A, 4.5V 950mV @ 250µA 21nC @ 4.5V - 1.47W Surface Mount 4-XFBGA, CSPBGA