21nC @ 10V,Gate Charge (Qg) @ Vgs
590pF @ 15V,Input Capacitance (Ciss) @ Vds
2 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SI2343CDS-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 30V 5.9A (Tc) 45 mOhm @ 4.2A, 10V 2.5V @ 250µA 21nC @ 10V 590pF @ 15V 2.5W Surface Mount TO-236-3, SC-59, SOT-23-3
SI4485DY-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 30V 5.9A (Ta), 6A (Tc) 42 mOhm @ 5.9A, 10V 2.5V @ 250µA 21nC @ 10V 590pF @ 15V 5W Surface Mount 8-SOIC (0.154", 3.90mm Width)