21nC @ 10V,Gate Charge (Qg) @ Vgs
475pF @ 10V,Input Capacitance (Ciss) @ Vds
1 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SI8467DB-T2-E1 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 20V 3.7A (Ta) 73 mOhm @ 1A, 4.5V 1.5V @ 250µA 21nC @ 10V 475pF @ 10V 780mW Surface Mount 4-XFBGA, CSPBGA