85 mOhm @ 3.5A, 10V,Rds On (Max) @ Id, Vgs
21nC @ 10V,Gate Charge (Qg) @ Vgs
4 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SI4848DY-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 150V 2.7A (Ta) 85 mOhm @ 3.5A, 10V 2V @ 250µA 21nC @ 10V - 1.5W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI4848DY-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 150V 2.7A (Ta) 85 mOhm @ 3.5A, 10V 2V @ 250µA 21nC @ 10V - 1.5W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI7898DP-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 150V 3A (Ta) 85 mOhm @ 3.5A, 10V 4V @ 250µA 21nC @ 10V - 1.9W Surface Mount PowerPAK® SO-8
SI7898DP-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 150V 3A (Ta) 85 mOhm @ 3.5A, 10V 4V @ 250µA 21nC @ 10V - 1.9W Surface Mount PowerPAK® SO-8