11A (Ta),Current - Continuous Drain (Id) @ 25°C
21nC @ 10V,Gate Charge (Qg) @ Vgs
3 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SFT1345-H ON SEMICONDUCTOR
MOSFET P-Channel, Metal Oxide 100V 11A (Ta) 275 mOhm @ 5.5A, 10V - 21nC @ 10V 1020pF @ 20V 1W Through Hole TO-251-3 Long Leads, IPak, TO-251AB
TPC8031-H(TE12L,Q) TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 30V 11A (Ta) 13.3 mOhm @ 5.5A, 10V 2.5V @ 1mA 21nC @ 10V 2150pF @ 10V - Surface Mount 8-SOIC (0.173", 4.40mm Width)
TPC8031-H(TE12LQM) TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 30V 11A (Ta) 13.3 mOhm @ 5.5A, 10V 2.5V @ 1mA 21nC @ 10V 2150pF @ 10V - Surface Mount 8-SOIC (0.173", 4.40mm Width)