| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FDMC86260 | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 150V | 5.4A (Ta), 16A (Tc) | 34 mOhm @ 5.4A, 10V | 4V @ 250µA | 21nC @ 10V | 1330pF @ 75V | 2.3W | Surface Mount | 8-PowerWDFN | |
| FDMS86252L | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 150V | 4.4A (Ta) | 56 mOhm @ 4.4A, 10V | 3V @ 250µA | 21nC @ 10V | 1335pF @ 75V | 2.5W | Surface Mount | 8-PowerTDFN | |
| BSB280N15NZ3 G | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 150V | 9A (Ta), 30A (Tc) | 28 mOhm @ 30A, 10V | 4V @ 60µA | 21nC @ 10V | 1600pF @ 75V | 57W | Surface Mount | 3-WDSON | |
| IXTP42N15T | IXYS CORP | MOSFET N-Channel, Metal Oxide | 150V | 42A (Tc) | 45 mOhm @ 500mA, 10V | 4.5V @ 250µA | 21nC @ 10V | 1880pF @ 25V | 200W | Through Hole | TO-220-3 | |
| SI4848DY-T1-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 150V | 2.7A (Ta) | 85 mOhm @ 3.5A, 10V | 2V @ 250µA | 21nC @ 10V | - | 1.5W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| SI4848DY-T1-E3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 150V | 2.7A (Ta) | 85 mOhm @ 3.5A, 10V | 2V @ 250µA | 21nC @ 10V | - | 1.5W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| SI7898DP-T1-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 150V | 3A (Ta) | 85 mOhm @ 3.5A, 10V | 4V @ 250µA | 21nC @ 10V | - | 1.9W | Surface Mount | PowerPAK® SO-8 | |
| SI7898DP-T1-E3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 150V | 3A (Ta) | 85 mOhm @ 3.5A, 10V | 4V @ 250µA | 21nC @ 10V | - | 1.9W | Surface Mount | PowerPAK® SO-8 |
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