140nC @ 10V,Gate Charge (Qg) @ Vgs
4.8W,Power - Max
1 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SISS27DN-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 30V 23A (Ta), 50A (Tc) 5.6 mOhm @ 15A, 10V 2.2V @ 250µA 140nC @ 10V 5250pF @ 15V 4.8W Surface Mount 8-PowerVDFN