2.5V @ 250µA,Vgs(th) (Max) @ Id
140nC @ 10V,Gate Charge (Qg) @ Vgs
3 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
NP75P04YLG-E1-AY RENESAS ELECTRONICS CORP
MOSFET P-Channel, Metal Oxide 40V 75A (Tc) 9.7 mOhm @ 37.5A, 10V 2.5V @ 250µA 140nC @ 10V 4800pF @ 25V 1W Surface Mount 8-SMD, Flat Lead Exposed Pad
SQJ461EP-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 60V 30A (Tc) 16 mOhm @ 14.4A, 10V 2.5V @ 250µA 140nC @ 10V 4710pF @ 30V 83W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
SQM110N04-03L-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 40V 120A (Tc) 3.5 mOhm @ 30A, 10V 2.5V @ 250µA 140nC @ 10V 5315pF @ 25V 230W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB