3.8 mOhm @ 50A, 10V,Rds On (Max) @ Id, Vgs
140nC @ 10V,Gate Charge (Qg) @ Vgs
3 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
TK100A10N1,S4X TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 100V 100A (Tc) 3.8 mOhm @ 50A, 10V 4V @ 1mA 140nC @ 10V 8800pF @ 50V 45W Through Hole TO-220-3 Full Pack
RJK0701DPP-E0#T2 RENESAS ELECTRONICS CORP
MOSFET N-Channel, Metal Oxide 75V 100A 3.8 mOhm @ 50A, 10V - 140nC @ 10V 10000pF @ 10V 30W Through Hole TO-220-3 Full Pack
RJK0701DPN-E0#T2 RENESAS ELECTRONICS CORP
MOSFET N-Channel, Metal Oxide 75V 100A 3.8 mOhm @ 50A, 10V - 140nC @ 10V 10000pF @ 10V 200W Surface Mount 8-WFDFN Exposed Pad