60V,Drain to Source Voltage (Vdss)
140nC @ 10V,Gate Charge (Qg) @ Vgs
6 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
TK100E06N1,S1X TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 60V 100A (Ta) 2.3 mOhm @ 50A, 10V 4V @ 1mA 140nC @ 10V 10500pF @ 30V 255W Through Hole TO-220-3
PSMN2R6-60PSQ NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 60V 150A (Tmb) 2.6 mOhm @ 25A, 10V 4V @ 1mA 140nC @ 10V 7629pF @ 25V 326W Through Hole TO-220-3
BUK762R6-60E,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 60V 120A (Ta) 2.6 mOhm @ 25A, 10V 4V @ 1mA 140nC @ 10V 10170pF @ 25V 324W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
STP80NE06-10 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 60V 80A (Tc) 10 mOhm @ 40A, 10V 4V @ 250µA 140nC @ 10V 10000pF @ 25V 150W Through Hole TO-220-3
TK100A06N1,S4X TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 60V 100A (Tc) 2.7 mOhm @ 50A, 10V 4V @ 1mA 140nC @ 10V 10500pF @ 30V 45W Through Hole TO-220-3 Full Pack
SQJ461EP-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 60V 30A (Tc) 16 mOhm @ 14.4A, 10V 2.5V @ 250µA 140nC @ 10V 4710pF @ 30V 83W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63