600V,Drain to Source Voltage (Vdss)
140nC @ 10V,Gate Charge (Qg) @ Vgs
7 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IXFX48N60Q3 IXYS CORP
MOSFET N-Channel, Metal Oxide 600V 48A (Tc) 140 mOhm @ 24A, 10V 6.5V @ 4mA 140nC @ 10V 7020pF @ 25V 1000W Through Hole TO-247-3
IXFR48N60Q3 IXYS CORP
MOSFET N-Channel, Metal Oxide 600V 32A (Tc) 154 mOhm @ 24A, 10V 6.5V @ 4mA 140nC @ 10V 7020pF @ 25V 500W Through Hole TO-247-3
IXFK48N60Q3 IXYS CORP
MOSFET N-Channel, Metal Oxide 600V 48A (Tc) 140 mOhm @ 24A, 10V 6.5V @ 4mA 140nC @ 10V 7020pF @ 25V 1000W Through Hole TO-264-3, TO-264AA
APT28F60S MICROSEMI POWER PRODUCTS GROUP
MOSFET N-Channel, FREDFET 600V 30A 220 mOhm @ 14A, 10V 5V @ 1mA 140nC @ 10V 5575pF @ 25V 520W Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
APT28F60B MICROSEMI POWER PRODUCTS GROUP
MOSFET N-Channel, Metal Oxide 600V 30A (Tc) 250 mOhm @ 14A, 10V 5V @ 1mA 140nC @ 10V 5575pF @ 25V 520W Through Hole TO-247-3
IRFPC50PBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 600V 11A (Tc) 600 mOhm @ 6A, 10V 4V @ 250µA 140nC @ 10V 2700pF @ 25V 180W Through Hole TO-247-3
IRFPC50 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 600V 11A (Tc) 600 mOhm @ 6A, 10V 4V @ 250µA 140nC @ 10V 2700pF @ 25V 180W Through Hole TO-247-3