| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IXTH50P10 | IXYS CORP | MOSFET P-Channel, Metal Oxide | 100V | 50A (Tc) | 55 mOhm @ 25A, 10V | 5V @ 250µA | 140nC @ 10V | 4350pF @ 25V | 300W | Through Hole | TO-247-3 | |
| IXTT50P10 | IXYS CORP | MOSFET P-Channel, Metal Oxide | 100V | 50A (Tc) | 55 mOhm @ 25A, 10V | 5V @ 250µA | 140nC @ 10V | 4350pF @ 25V | 300W | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | |
| NP75P04YLG-E1-AY | RENESAS ELECTRONICS CORP | MOSFET P-Channel, Metal Oxide | 40V | 75A (Tc) | 9.7 mOhm @ 37.5A, 10V | 2.5V @ 250µA | 140nC @ 10V | 4800pF @ 25V | 1W | Surface Mount | 8-SMD, Flat Lead Exposed Pad | |
| SISS27DN-T1-GE3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 30V | 23A (Ta), 50A (Tc) | 5.6 mOhm @ 15A, 10V | 2.2V @ 250µA | 140nC @ 10V | 5250pF @ 15V | 4.8W | Surface Mount | 8-PowerVDFN | |
| SQJ461EP-T1-GE3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 60V | 30A (Tc) | 16 mOhm @ 14.4A, 10V | 2.5V @ 250µA | 140nC @ 10V | 4710pF @ 30V | 83W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| SI7463DP-T1-E3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 40V | 11A (Ta) | 9.2 mOhm @ 18.6A, 10V | 3V @ 250µA | 140nC @ 10V | - | 1.9W | Surface Mount | PowerPAK® SO-8 | |
| SI7463DP-T1-GE3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 40V | 11A (Ta) | 9.2 mOhm @ 18.6A, 10V | 3V @ 250µA | 140nC @ 10V | - | 1.9W | Surface Mount | PowerPAK® SO-8 |
© 2016 Copyright
