SI4894BDY-T1-GE3 |
VISHAY SILICONIX |
|
MOSFET N-Channel, Metal Oxide
|
30V
|
8.9A (Ta)
|
11 mOhm @ 12A, 10V
|
3V @ 250µA
|
38nC @ 10V
|
1580pF @ 15V
|
1.4W
|
Surface Mount
|
8-SOIC (0.154", 3.90mm Width)
|
SI4894BDY-T1-E3 |
VISHAY SILICONIX |
|
MOSFET N-Channel, Metal Oxide
|
30V
|
8.9A (Ta)
|
11 mOhm @ 12A, 10V
|
3V @ 250µA
|
38nC @ 10V
|
1580pF @ 15V
|
1.4W
|
Surface Mount
|
8-SOIC (0.154", 3.90mm Width)
|
SI4688DY-T1-GE3 |
VISHAY SILICONIX |
|
MOSFET N-Channel, Metal Oxide
|
30V
|
8.9A (Ta)
|
11 mOhm @ 12A, 10V
|
3V @ 250µA
|
38nC @ 10V
|
1580pF @ 15V
|
1.4W
|
Surface Mount
|
8-SOIC (0.154", 3.90mm Width)
|
SI4688DY-T1-E3 |
VISHAY SILICONIX |
|
MOSFET N-Channel, Metal Oxide
|
30V
|
8.9A (Ta)
|
11 mOhm @ 12A, 10V
|
3V @ 250µA
|
38nC @ 10V
|
1580pF @ 15V
|
1.4W
|
Surface Mount
|
8-SOIC (0.154", 3.90mm Width)
|