18.3A (Tc),Current - Continuous Drain (Id) @ 25°C
3V @ 250µA,Vgs(th) (Max) @ Id
3V @ 250µA,Vgs(th) (Max) @ Id
2 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SUD19P06-60-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 60V 18.3A (Tc) 60 mOhm @ 10A, 10V 3V @ 250µA 40nC @ 10V 1710pF @ 25V 2.3W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
SUD19P06-60-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 60V 18.3A (Tc) 60 mOhm @ 10A, 10V 3V @ 250µA 40nC @ 10V 1710pF @ 25V 2.3W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63