3.5V @ 1mA,Vgs(th) (Max) @ Id
60nC @ 10V,Gate Charge (Qg) @ Vgs
2 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
2SK1930(TE24L,Q) TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 1000V (1kV) 4A (Ta) 3.8 Ohm @ 2A, 10V 3.5V @ 1mA 60nC @ 10V 700pF @ 25V 100W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
2SK1119(F) TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 1000V (1kV) 4A (Ta) 3.8 Ohm @ 2A, 10V 3.5V @ 1mA 60nC @ 10V 700pF @ 25V 100W Through Hole TO-220-3