| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| NTMFS4835NT1G | ON SEMICONDUCTOR | MOSFET N-Channel, Metal Oxide | 30V | 13A (Ta), 130A (Tc) | 3.5 mOhm @ 30A, 10V | 2.5V @ 250µA | 52nC @ 11.5V | 3100pF @ 12V | 890mW | Surface Mount | 8-TDFN Exposed Pad (5 Lead) | |
| NTMFS4835NT3G | ON SEMICONDUCTOR | MOSFET N-Channel, Metal Oxide | 30V | 13A (Ta), 130A (Tc) | 3.5 mOhm @ 30A, 10V | 2.5V @ 250µA | 39nC @ 4.5V | 3100pF @ 12V | 890mW | Surface Mount | 8-TDFN Exposed Pad (5 Lead) | |
| SQM110N04-03L-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 40V | 120A (Tc) | 3.5 mOhm @ 30A, 10V | 2.5V @ 250µA | 140nC @ 10V | 5315pF @ 25V | 230W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| SQM120N06-3M5L-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 60V | 120A (Tc) | 3.5 mOhm @ 30A, 10V | 2.5V @ 250µA | 330nC @ 10V | 14700pF @ 25V | 375W | - | - | |
| SQM110N06-04L-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 60V | 120A (Tc) | 3.5 mOhm @ 30A, 10V | 2.5V @ 250µA | 276nC @ 10V | 9125pF @ 25V | 375W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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