GaNFET N-Channel, Gallium Nitride,FET Type
2.5V @ 250µA,Vgs(th) (Max) @ Id
16 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
EPC8005ENGR EPCOS AG
GaNFET N-Channel, Gallium Nitride 65V 2.9A (Ta) 275 mOhm @ 500mA, 5V 2.5V @ 250µA 0.218nC @ 32.5V 29pF @ 32.5V - Surface Mount Die
EPC8004ENGR EPCOS AG
GaNFET N-Channel, Gallium Nitride 40V 4.4A (Ta) 125 mOhm @ 500mA, 5V 2.5V @ 250µA - 45pF @ 20V - Surface Mount Die
EPC8007ENGR EPCOS AG
GaNFET N-Channel, Gallium Nitride 40V 3.8A (Ta) 160 mOhm @ 500mA, 5V 2.5V @ 250µA - 39pF @ 20V - Surface Mount Die
EPC8007TENGR EPCOS AG
GaNFET N-Channel, Gallium Nitride 40V 3.8A (Ta) 160 mOhm @ 500mA, 5V 2.5V @ 250µA 0.302nC @ 20V 39pF @ 20V - Surface Mount Die
EPC8008ENGR EPCOS AG
GaNFET N-Channel, Gallium Nitride 40V 2.7A (Ta) 325 mOhm @ 500mA, 5V 2.5V @ 250µA - 25pF @ 20V - Surface Mount Die
EPC8008TENGR EPCOS AG
GaNFET N-Channel, Gallium Nitride 40V 2.7A (Ta) 325 mOhm @ 500mA, 5V 2.5V @ 250µA 0.177nC @ 20V 25pF @ 20V - Surface Mount Die
EPC8009ENGR EPCOS AG
GaNFET N-Channel, Gallium Nitride 65V 4.1A (Ta) 138 mOhm @ 500mA, 5V 2.5V @ 250µA 0.380nC @ 32.5V 47pF @ 32.5V - Surface Mount Die
EPC8002ENGR EPCOS AG
GaNFET N-Channel, Gallium Nitride 65V 2A (Ta) 530 mOhm @ 500mA, 5V 2.5V @ 250µA - 21pF @ 32.5V - Surface Mount Die
EPC8003ENGR EPCOS AG
GaNFET N-Channel, Gallium Nitride 100V 2.5A (Ta) 300 mOhm @ 500mA, 5V 2.5V @ 250µA - 38pF @ 50V - Surface Mount Die
EPC8009TENGR EPCOS AG
GaNFET N-Channel, Gallium Nitride 65V 4.1A (Tc) 138 mOhm @ 500mA, 5V 2.5V @ 250µA 0.380nC @ 32.5V 47pF @ 32.5V - Surface Mount Die