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400 mOhm @ 4.5A, 10V,Rds On (Max) @ Id, Vgs

4V @ 1mA,Vgs(th) (Max) @ Id

9 parts found

Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case

SPD07N20 G INFINEON TECHNOLOGIES AG

MOSFET N-Channel, Metal Oxide 200V 7A 400 mOhm @ 4.5A, 10V 4V @ 1mA 31.5nC @ 10V 530pF @ 25V 40W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63

BUZ73 H3046 INFINEON TECHNOLOGIES AG

MOSFET N-Channel, Metal Oxide 200V 7A (Tc) 400 mOhm @ 4.5A, 10V 4V @ 1mA - 530pF @ 25V 40W Through Hole TO-220-3

BUZ73 H INFINEON TECHNOLOGIES AG

MOSFET N-Channel, Metal Oxide 200V 7A (Tc) 400 mOhm @ 4.5A, 10V 4V @ 1mA - 530pF @ 25V 40W Through Hole TO-220-3

BUZ73 INFINEON TECHNOLOGIES AG

MOSFET N-Channel, Metal Oxide 200V 7A (Tc) 400 mOhm @ 4.5A, 10V 4V @ 1mA - 530pF @ 25V 40W Through Hole TO-220-3

BUZ73 E3046 INFINEON TECHNOLOGIES AG

MOSFET N-Channel, Metal Oxide 200V 7A (Tc) 400 mOhm @ 4.5A, 10V 4V @ 1mA - 530pF @ 25V 40W Through Hole TO-220-3

SPD07N20 INFINEON TECHNOLOGIES AG

MOSFET N-Channel, Metal Oxide 200V 7A (Tc) 400 mOhm @ 4.5A, 10V 4V @ 1mA 31.5nC @ 10V 530pF @ 25V 40W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63

PHP9NQ20T,127 NXP SEMICONDUCTORS

MOSFET N-Channel, Metal Oxide 200V 8.7A 400 mOhm @ 4.5A, 10V 4V @ 1mA 24nC @ 10V 959pF @ 25V 88W Through Hole TO-220-3

PHD9NQ20T,118 NXP SEMICONDUCTORS

MOSFET N-Channel, Metal Oxide 200V 8.7A (Tc) 400 mOhm @ 4.5A, 10V 4V @ 1mA 24nC @ 10V 959pF @ 25V 88W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63

PHX9NQ20T,127 NXP SEMICONDUCTORS

MOSFET N-Channel, Metal Oxide 200V 5.2A (Ta) 400 mOhm @ 4.5A, 10V 4V @ 1mA 24nC @ 10V 959pF @ 25V 25W Through Hole TO-220-3 Isolated Tab

Part Numbers	Manufacturer Name	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) @ Vgs	Input Capacitance (Ciss) @ Vds	Power - Max	Mounting Type	Package / Case
SPD07N20 G	INFINEON TECHNOLOGIES AG	MOSFET N-Channel, Metal Oxide	200V	7A	400 mOhm @ 4.5A, 10V	4V @ 1mA	31.5nC @ 10V	530pF @ 25V	40W	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63
BUZ73 H3046	INFINEON TECHNOLOGIES AG	MOSFET N-Channel, Metal Oxide	200V	7A (Tc)	400 mOhm @ 4.5A, 10V	4V @ 1mA	-	530pF @ 25V	40W	Through Hole	TO-220-3
BUZ73 H	INFINEON TECHNOLOGIES AG	MOSFET N-Channel, Metal Oxide	200V	7A (Tc)	400 mOhm @ 4.5A, 10V	4V @ 1mA	-	530pF @ 25V	40W	Through Hole	TO-220-3
BUZ73	INFINEON TECHNOLOGIES AG	MOSFET N-Channel, Metal Oxide	200V	7A (Tc)	400 mOhm @ 4.5A, 10V	4V @ 1mA	-	530pF @ 25V	40W	Through Hole	TO-220-3
BUZ73 E3046	INFINEON TECHNOLOGIES AG	MOSFET N-Channel, Metal Oxide	200V	7A (Tc)	400 mOhm @ 4.5A, 10V	4V @ 1mA	-	530pF @ 25V	40W	Through Hole	TO-220-3
SPD07N20	INFINEON TECHNOLOGIES AG	MOSFET N-Channel, Metal Oxide	200V	7A (Tc)	400 mOhm @ 4.5A, 10V	4V @ 1mA	31.5nC @ 10V	530pF @ 25V	40W	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63
PHP9NQ20T,127	NXP SEMICONDUCTORS	MOSFET N-Channel, Metal Oxide	200V	8.7A	400 mOhm @ 4.5A, 10V	4V @ 1mA	24nC @ 10V	959pF @ 25V	88W	Through Hole	TO-220-3
PHD9NQ20T,118	NXP SEMICONDUCTORS	MOSFET N-Channel, Metal Oxide	200V	8.7A (Tc)	400 mOhm @ 4.5A, 10V	4V @ 1mA	24nC @ 10V	959pF @ 25V	88W	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63
PHX9NQ20T,127	NXP SEMICONDUCTORS	MOSFET N-Channel, Metal Oxide	200V	5.2A (Ta)	400 mOhm @ 4.5A, 10V	4V @ 1mA	24nC @ 10V	959pF @ 25V	25W	Through Hole	TO-220-3 Isolated Tab

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