3.4 mOhm @ 25A, 10V,Rds On (Max) @ Id, Vgs
Through Hole,Mounting Type
4 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
BUK9E3R7-60E,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 60V 120A (Ta) 3.4 mOhm @ 25A, 10V 2.1V @ 1mA 95nC @ 5V 13490pF @ 25V 293W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
BUK953R5-60E,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 60V 120A (Ta) 3.4 mOhm @ 25A, 10V 2.1V @ 1mA 95nC @ 5V 13490pF @ 25V 293W Through Hole TO-220-3
PSMN3R3-60PLQ NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 60V 130A (Tmb) 3.4 mOhm @ 25A, 10V 2.1V @ 1mA 95nC @ 5V 10115pF @ 25V 293W Through Hole TO-220-3
BUK753R4-30B,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 75A 3.4 mOhm @ 25A, 10V 4V @ 1mA 75nC @ 10V 4951pF @ 25V 255W Through Hole TO-220-3