Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|
APT60M75L2LLG | MICROSEMI POWER PRODUCTS GROUP | MOSFET N-Channel, Metal Oxide | 600V | 73A (Tc) | 75 mOhm @ 36.5A, 10V | 5V @ 5mA | 195nC @ 10V | 8930pF @ 25V | 893W | Through Hole | TO-264-3, TO-264AA | |
APT60M75L2FLLG | MICROSEMI POWER PRODUCTS GROUP | MOSFET N-Channel, Metal Oxide | 600V | 73A (Tc) | 75 mOhm @ 36.5A, 10V | 5V @ 5mA | 195nC @ 10V | 8930pF @ 25V | 893W | Through Hole | TO-264-3, TO-264AA | |
SIHG73N60E-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 600V | 73A (Tc) | 39 mOhm @ 36A, 10V | 4V @ 250µA | 362nC @ 10V | 7700pF @ 100V | 520W | Through Hole | TO-247-3 | |
SIHW73N60E-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 600V | 73A (Tc) | 39 mOhm @ 36A, 10V | 4V @ 250µA | 362nC @ 10V | 7700pF @ 100V | 520W | Through Hole | TO-247-3 | |
SIHG73N60E-E3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 600V | 73A (Tc) | 39 mOhm @ 36A, 10V | 4V @ 250µA | 362nC @ 10V | 7700pF @ 100V | 520W | Through Hole | TO-247-3 |