600V,Drain to Source Voltage (Vdss)
73A (Tc),Current - Continuous Drain (Id) @ 25°C
5 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
APT60M75L2LLG MICROSEMI POWER PRODUCTS GROUP
MOSFET N-Channel, Metal Oxide 600V 73A (Tc) 75 mOhm @ 36.5A, 10V 5V @ 5mA 195nC @ 10V 8930pF @ 25V 893W Through Hole TO-264-3, TO-264AA
APT60M75L2FLLG MICROSEMI POWER PRODUCTS GROUP
MOSFET N-Channel, Metal Oxide 600V 73A (Tc) 75 mOhm @ 36.5A, 10V 5V @ 5mA 195nC @ 10V 8930pF @ 25V 893W Through Hole TO-264-3, TO-264AA
SIHG73N60E-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 600V 73A (Tc) 39 mOhm @ 36A, 10V 4V @ 250µA 362nC @ 10V 7700pF @ 100V 520W Through Hole TO-247-3
SIHW73N60E-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 600V 73A (Tc) 39 mOhm @ 36A, 10V 4V @ 250µA 362nC @ 10V 7700pF @ 100V 520W Through Hole TO-247-3
SIHG73N60E-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 600V 73A (Tc) 39 mOhm @ 36A, 10V 4V @ 250µA 362nC @ 10V 7700pF @ 100V 520W Through Hole TO-247-3