| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 2N6800 | MICROSEMI COMMERCIAL BUSINESS UNIT | MOSFET N-Channel, Metal Oxide | 400V | 3A (Tc) | 1 Ohm @ 2A, 10V | 4V @ 250µA | 5.75nC @ 10V | - | 800mW | Through Hole | TO-205AF | |
| JAN2N6800 | MICROSEMI CORP | MOSFET N-Channel, Metal Oxide | 400V | 3A (Tc) | 1.1 Ohm @ 3A, 10V | 4V @ 250µA | 34.75nC @ 10V | - | 800mW | Through Hole | TO-205AF |
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