36A (Tc),Current - Continuous Drain (Id) @ 25°C
3100pF @ 25V,Input Capacitance (Ciss) @ Vds
6 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IXTA36P15P IXYS CORP
MOSFET P-Channel, Metal Oxide 150V 36A (Tc) 110 mOhm @ 18A, 10V 4.5V @ 250µA 55nC @ 10V 3100pF @ 25V 300W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXTP36P15P IXYS CORP
MOSFET P-Channel, Metal Oxide 150V 36A (Tc) 110 mOhm @ 18A, 10V 4.5V @ 250µA 55nC @ 10V 3100pF @ 25V 300W Through Hole TO-220-3
IXTQ36P15P IXYS CORP
MOSFET P-Channel, Metal Oxide 150V 36A (Tc) 110 mOhm @ 18A, 10V 4.5V @ 250µA 55nC @ 10V 3100pF @ 25V 300W Through Hole TO-3P-3, SC-65-3
IXTH36P15P IXYS CORP
MOSFET P-Channel, Metal Oxide 150V 36A (Tc) 110 mOhm @ 18A, 10V 4.5V @ 250µA 55nC @ 10V 3100pF @ 25V 300W Through Hole TO-247-3
SUM36N20-54P-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 200V 36A (Tc) 53 mOhm @ 20A, 15V 4.5V @ 250µA 127nC @ 15V 3100pF @ 25V 3.12W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SUP36N20-54P-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 200V 36A (Tc) 53 mOhm @ 20A, 15V 4.5V @ 250µA 127nC @ 15V 3100pF @ 25V 3.12W Through Hole TO-220-3