| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| CSD16325Q5 | TEXAS INSTRUMENTS INC | MOSFET N-Channel, Metal Oxide | 25V | 33A (Ta), 100A (Tc) | 2 mOhm @ 30A, 8V | 1.4V @ 250µA | 25nC @ 4.5V | 4000pF @ 12.5V | 3.1W | Surface Mount | 8-TDFN Exposed Pad | |
| BSC014NE2LSI | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 25V | 33A (Ta), 100A (Tc) | 1.4 mOhm @ 30A, 10V | 2V @ 250µA | 39nC @ 10V | 2700pF @ 12V | 74W | Surface Mount | 8-PowerTDFN | |
| CSD16325Q5C | TEXAS INSTRUMENTS INC | MOSFET N-Channel, Metal Oxide | 25V | 33A (Ta), 100A (Tc) | 2 mOhm @ 30A, 8V | 1.4V @ 250µA | 25nC @ 4.5V | 4000pF @ 12.5V | 3.1W | Surface Mount | 8-TDFN Exposed Pad |
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