Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|
CSD16321Q5 | TEXAS INSTRUMENTS INC | MOSFET N-Channel, Metal Oxide | 25V | 31A (Ta), 100A (Tc) | 2.4 mOhm @ 25A, 8V | 1.4V @ 250µA | 19nC @ 4.5V | 3100pF @ 12.5V | 3.1W | Surface Mount | 8-TDFN Exposed Pad | |
BSC016N04LS G | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 40V | 31A (Ta), 100A (Tc) | 1.6 mOhm @ 50A, 10V | 2V @ 85µA | 150nC @ 10V | 12000pF @ 20V | 139W | Surface Mount | 8-PowerTDFN | |
CSD16407Q5C | TEXAS INSTRUMENTS INC | MOSFET N-Channel, Metal Oxide | 25V | 31A (Ta), 100A (Tc) | 2.4 mOhm @ 25A, 10V | 1.9V @ 250µA | 18nC @ 4.5V | 2660pF @ 12.5V | 3.1W | Surface Mount | 8-TDFN Exposed Pad | |
CSD16407Q5 | TEXAS INSTRUMENTS INC | MOSFET N-Channel, Metal Oxide | 25V | 31A (Ta), 100A (Tc) | 2.4 mOhm @ 25A, 10V | 1.9V @ 250µA | 18nC @ 4.5V | 2660pF @ 12.5V | 3.1W | Surface Mount | 8-TDFN Exposed Pad | |
CSD16321Q5C | TEXAS INSTRUMENTS INC | MOSFET N-Channel, Metal Oxide | 25V | 31A (Ta), 100A (Tc) | 2.4 mOhm @ 25A, 8V | 1.4V @ 250µA | 19nC @ 4.5V | 3100pF @ 12.5V | 3.1W | Surface Mount | 8-TDFN Exposed Pad |