MOSFET P-Channel, Metal Oxide,FET Type
300mA (Ta),Current - Continuous Drain (Id) @ 25°C
4 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
NX3008PBKMB,315 NXP SEMICONDUCTORS
MOSFET P-Channel, Metal Oxide 30V 300mA (Ta) 4.1 Ohm @ 200mA, 4.5V 1.1V @ 250µA 0.72nC @ 4.5V 46pF @ 15V 360mW Surface Mount 3-XFDFN
MMBF2202PT1 ON SEMICONDUCTOR
MOSFET P-Channel, Metal Oxide 20V 300mA (Ta) 2.2 Ohm @ 200mA, 10V 2.4V @ 250µA 2.7nC @ 10V 50pF @ 5V 150mW Surface Mount SC-70, SOT-323
MMBF2202PT1G ON SEMICONDUCTOR
MOSFET P-Channel, Metal Oxide 20V 300mA (Ta) 2.2 Ohm @ 200mA, 10V 2.4V @ 250µA 2.7nC @ 10V 50pF @ 5V 150mW Surface Mount SC-70, SOT-323
SI1419DH-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 200V 300mA (Ta) 5 Ohm @ 400mA, 10V 4.5V @ 100µA 6.2nC @ 10V - 1W Surface Mount 6-TSSOP, SC-88, SOT-363